ESE 521 The Physics of Solid State Energy Devices
1. A p-n abrupt junction with NA=1017/cm3 and ND=5x1015/cm3 has τp=0.1 µs and τn=0.01 µs with kT=0.026 eV, A=10-4 cm2, ni=1010/cm3, µn=801 cm2/Vs and µp=438 cm2/Vs.
2. A silicon step junction diode with a cross-sectional area A=10-4 cm2 has a doping of NA=1017/cm3 and ND=1015/cm3. Let µn=801 cm2/Vs and τn=0.1 µs on the p-side; and let µp=477 cm2/Vs and τp=1 µs on the n-side.
3. A p+-n silicon step junction is doped NA=1018/cm3and ND=1016/cm3 where Ecr=4x105 V/cm with ni=1010/cm3 (kT =0.026 eV). Calculate:
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