**ESE 521 The Physics of Solid State Energy Devices **

**Homework #4 **

1. A p-n abrupt junction with N_{A}=10^{17}/cm^{3} and N_{D}=5x10^{15}/cm^{3} has τ_{p}=0.1 µs and τ_{n}=0.01 µs with kT=0.026 eV, A=10^{-4} cm^{2}, n_{i}=10^{10}/cm^{3}, µ_{n}=801 cm^{2}/Vs and µ_{p}=438 cm^{2}/Vs.

- Calculate the reverse saturation current due to holes.
- Calculate the reverse saturation current due to electrons.
- Calculate the total reverse saturation current.
- If V
_{A}= V_{bi}/2, calculate the injected minority carrier currents at the edges of the depletion region. What are the injected minority carrier concentrations at 0 and 1 µm into the bulk regions? - If V
_{A}= -V_{bi}/2, calculate the injected (depleted) minority carrier concentrations at the edges of the bulk regions? Calculate the minority carrier currents at the edges of the depletion regions. - At what value of V
_{A}and where in the diode will the assumption of "low-level injection" first be violated? Use the criterion of the minority carrier reaching 10% of the majority carrier concentration as the violation.

2. A silicon step junction diode with a cross-sectional area A=10^{-4} cm^{2} has a doping of N_{A}=10^{17}/cm^{3} and N_{D}=10^{15}/cm^{3}. Let µ_{n}=801 cm^{2}/Vs and τ_{n}=0.1 µs on the p-side; and let µ_{p}=477 cm^{2}/Vs and τ_{p}=1 µs on the n-side.

- Calculate the current through the diode at room temperature if
- V
_{A}= -50 V - V
_{A}= -0.1 V, and - V
_{A}= 0.2 V

- V
- Assuming that the mobilities and lifetimes do not vary significantly with temperatures. repeat part (a) for T=500 K.
- Summarize in your own words what has been exhibited by this problem.

3. A p^{+}-n silicon step junction is doped N_{A}=10^{18}/cm^{3}and N_{D}=10^{16}/cm^{3} where E_{cr}=4x10^{5} V/cm with n_{i}=10^{10}/cm^{3} (kT =0.026 eV). Calculate:

- V
_{BR}; - the depletion width at V
- If N
_{D}=10^{17}/cm^{3}repeat part (a)

Earn back money you have spent on downloaded sample

To export a reference to this article please select a referencing stye below.

Assignment Hippo (2021) . Retrive from http://assignmenthippo.com/sample-assignment/ese-521-the-physics-of-solid-state-energy-devices

"." Assignment Hippo ,2021, http://assignmenthippo.com/sample-assignment/ese-521-the-physics-of-solid-state-energy-devices

Assignment Hippo (2021) . Available from: http://assignmenthippo.com/sample-assignment/ese-521-the-physics-of-solid-state-energy-devices

[Accessed 17/10/2021].

Assignment Hippo . ''(Assignment Hippo,2021) http://assignmenthippo.com/sample-assignment/ese-521-the-physics-of-solid-state-energy-devices accessed 17/10/2021.

Want to order fresh copy of the **Sample Template Answers? ** online or do you need the old solutions for Sample Template, contact our customer support or talk to us to get the answers of it.

Our motto is deliver assignment on Time. Our Expert writers deliver quality assignments to the students.

Get reliable and unique assignments by using our 100% plagiarism-free.

Get connected 24*7 with our Live Chat support executives to receive instant solutions for your assignment.

Get Help with all the subjects like: Programming, Accounting, Finance, Engineering, Law and Marketing.

Get premium service at a pocket-friendly rate at AssignmentHippo

- Assignment Writing Guide
- Essay Writing Guide
- Dissertation Writing Guide
- Research Paper Writing Guide

- Accounts
- Computer Science
- Economics
- Engineering

Tap to ChatGet instant assignment help